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Composition of silicon-carbonic of domains on crystals of silicon (100)

Keywords:

V.Ya. Shanygin – Senior Engineer, Saratov branch of Kotelnikov IRE RAS. E-mail: vitairerun@mail.ru R.K. Yafarov – Dr.Sc. (Eng.), Head of Laboratory, Saratov branch of Kotelnikov IRE RAS S.Yu. Suzdaltsev – Ph.D. (Eng.), Senior Research Scientist, Saratov branch of Kotelnikov IRE RAS D.V. Nefedov – Ph.D. (Eng.), Research Scientist, Saratov branch of Kotelnikov IRE RAS


It is shown that at optimum duration of sedimentation on silicon plates with a natural oxide coating the lateral sizes of domains are stabilized at the level of 200 nm, and heights of the ledges received by plasmochemical etching of silicon through domain mask coatings change in the range from 40 to 80 nm.
References:

 

  1. SHanygin V.JA., JAfarov R.K. // PZHTF. 2014. T. 40. V. 7. S. 8.
  2. Oura K., Lifshic V.G., Saranin A.A., Zotov A.V., Katajama M. Vvedenie v fiziku poverkhnosti / Pod red. K. Oura. M.: Nauka. 2006.

 

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