G.F. Zargano – Dr. Sc. (Phys.-Math.), Professor, Head of Department of Radiophysics, Southern Federal University (Rostov-on-Don). E-mail: email@example.com
V.V. Zemlyakov – Ph. D. (Phys.-Math.), Associate Professor, Southern Federal University (Rostov-on-Don). E-mail: firstname.lastname@example.org
S.V. Krutiev – Post-graduate Student, Department of Radiophysics, Southern Federal University (Rostov-on-Don). E-mail: email@example.com
The possibilities of realization of waveguides elements in the structure of multilayered integrated circuits is carried out. Such technology received the name SIW-technology (Substrate Integrated Waveguide). Thus, it is possible to unite advantages of rectangular waveguides, such as high good quality, small losses, big power transferred, with advantages of microelectronic components – compactness, low cost, high flexibility of production.
For today there is a number of the techniques, allowing to calculate such structures, the part of them uses principles of calculations of classical rectangular waveguides with certain assumptions, the part uses more bulky algorithms considering, partially or completely, real properties of geometry. Application of rectangular waveguides, allowed building in integrated chips such devices, as the filters, directional couplers, multiplexers and even horn and slot antennas.
The appearance in the seventies the last century in an arsenal of the microwave electronics element base of waveguides of complex cross-section, in particular, single- and double-ridge waveguides, led to a huge increase of technical characteristics level of many de-vices. There was a possibility essentially to expand an operating frequency range of waveguide nodes, to reduce the impedance and mass characteristics. The implementation of waveguides of complex cross-section allowed building the devices based on new physical principles, in particular, frequency selective devices.
In the current article it is noted that realization of waveguides of complex cross-section and nodes on their basis in integrated chips by means of SIW-technology is capable to replace with the same success rectangular waveguides and to produce the devices on new, modern, hi-tech level.
As an example the possibility of realization of the band-pass SIW filters on the basis of ridged waveguides is considered. The filter prototype is constructed on thin transverse inductive diaphragms forming cavity resonators with direct coupling. Conversion to SIW structure is made by the corresponding recalculation of the dimensions taking into account thickness of dielectric layers of the applied integrated circuit and their dielectric permeability.
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