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Optimization of parameters of a bipolar transistor model, basing on its experimental characteristics

Keywords:

A.L. Khvalin – Dr. Sc. (Eng.), Associate Professor, Saratov State University named after N.G. Chernyshevsky. E-mail: khvalin63@mail.ru L.L. Strakhova – Ph. D. (Phys.-Math.), Associate Professor, Saratov State University named after N.G. Chernyshevsky A.V. Vorobiev – Engineer, NIKA-Microwave, Ltd (Saratov)


Currently, a large part of the developments in the field of wireless devices is performed using computer-aided design (CAD). However, their use is limited by the lack of libraries of active devices. The absence of specific models of transistors in a CAD library (in particular, Microwave Office) does not allow efficient circuit design of electronic devices based on them. The paper presents a methodology for determining the parameters of the equivalent circuit of Gummel–Pune bipolar transistor basing on its experimental characteristics. Some of the most effective methods of optimization, such as the random search method, differential evolution method, the simplex method, have been used in solving the problem of modeling. Static and frequency experimental characteristics were used as the objective functions. Parameters of the equivalent circuit and the results of calculations of basic transistor characteristics are given in the paper. Modeling is carried out on the example of the bipolar transistor BFR90 of the company Vishay Semiconductors, which is widely used in various electronic devices such as television antenna amplifiers. The paper presents the optimal parameters of Gummel–Pune model of BFR90 bipolar transistor and its basic static and frequency characteristics. Relative error of modeling the amplitude-frequency characteristics is within 10%, and of the phase frequency characteristics – within 9%. The applied simulation procedure can be used to create computer libraries of active elements.
References:

 

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