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p-i-n-Diode millimeter phase shifter in a waveguide structure

Keywords:

M. D. Parnes – Dr.Sc. (Eng.), Chief Engineer, “Rezonans” plc. E-mail: info@antennas.spb.ru O. G. Vendik – Dr.Sc. (Eng.), Professor, St. Petersburg State Electrotechnical University “LETI”. E-mail: ogvendik@rambler.ru


In this paper a calculation procedure has been proposed to design the p-i-n-diode phase shifter based on the waveguide transmission line. Such phase shifter combines the advantages of the p-i-n-diodes, which are characterized by small size, low power control circuits, and the advantages of waveguide phase shifters providing significant power (35 W) and low insertion loss (2,5 dB) at a frequency of 33 GHz. It is reasonable to consider a well known periodically loaded-line phase shifter using p-i-n-diodes as switching devices. For the operational frequency band of 10% the loaded-line phase shifter is often used for 45 degrees or lower phase shift bits, in such a case only, one can provide good matching, low loss, and constant amplitude/phase characteristic. By spacing the reactive loads approximately a quarter-wavelength apart, the amplitude perturbation can be minimized and equalized in both states. The tunable load is designed as a series connection of three p-i-n-diodes and two inductive rods. The inductive segment can be performed not only as a rod of radius r, but as a section of a planar transmission line. A small section of the tunable load of length s belongs to the p-i-n-diode with its contact pads. The entire length of the tunable load h is equal to the height of the waveguide. The structure of a switchable load has been presented. It is described by series connection of ABCD-matrices. The matrices A1, A3, and A5 correspond to the connections of p-i-n-diode and contact pads. We consider two ways of simulation of the switchable load impedance: 1 – the analytical model, which uses the set of formulas presented above; 2 – the full wave 3-D electromagnetic field analysis. The results of the simulation using the analytical model and the full wave analysis are in good agreement. The p-i-n-diode of Si group can withstand 50 V of microwave voltage drop at the frequency of 35 GHz. Thus, the developed phase shifter can work under power of 35 W in a pulse mode operation. The five-bit waveguide phase shifter of Ka-band has been designed using the above-mentioned procedure. The 11° and 22° bits have been designed using a printed circuit board (PCB) technology. The PCB is located at a distance a0 = 0,085w from the narrow wall of the waveguide. These two bits have been realized using the same structure containing the stub designed as a transmission line section periodically loaded by three silicon p-i-n-diodes with beam leads. For the 11° bit, the diodes with capacitance Ca = 0,02 pF have been used and for the 22° bit the capacitance Ca = 0,036 pF according equations has been required. The distance between the nearest-neighbor sections is likewise one quarter of the guiding wavelength. The higher order bits of 45°, 90° and 180° have been made on the PCB installed at a distance of a0 = 0,2w from the narrow wall of the waveguide. The conductors have been printed on the foil-coated dielectric with the thickness of 0,127 mm of Taconic. The intrinsic resistance of the used p-i-n-diodes is Ra = 1 Ohm. Finally the laboratory sample of five-bit phase shifter designed using the proposed procedure has been fabricated and measured.
References:

 

  1. Vendik O.G., Parnes M.D. Antenny s ehlektricheskim skanirovaniem (Vvedenie v teoriju) / pod red. chl.-korr. RANL.D. Bakhrakha. M.: SAJJNS-PRESS. 2002.
  2. Mailoux R.J.Phased array antenna handbook. Boston, London: Artech House Inc. 1994.
  3. White J.F.High power, p-i-n diode controlled, microwave transmission phase shifters // IEEE Trans. on Microwave Theory and Techniques. March. 1965. MTT-13. P. 233–242.
  4. Glance B. A fast low-loss microstrip p-i-n phase shifter // IEEE Trans. on Microwave Theory and Techniques. Jan. 1979. MTT-27. P. 14–16.
  5. Callsen H., Meinel H.H., Hoefer W.J.R. p-i-n Diode control devices in E-plane technique // IEEE Trans. on Microwave Theory and Techniques. Feb. 1989. MTT-37. P. 307–316.
  6. Chang K.et. al. W-band (75 to 110 GHz) microstrip components // IEEE-MTT Microwave Symposium Digest Technical Papers. June 1985. P. 371–374.
  7. Nguyen C., Yen P. A W-band (75 to 110 GHz) broadband microstrip phase shifter // 16th European Microwave Conference. Sep. 1986. P. 133–136.
  8. Virga K.L., Seaton A.F., Walker L.R. A waveguide switched-susceptance (diode-patch) phase shifter // Microwave Symposium Digest. IEEE MTT-S International. Jun. 1989. V. 1. P. 123–126.
  9. Koul S.K., Bhat B. Microwave and millimeter wave phase shifters / in the book: Semiconductor and delay line phase shifters. Norwood, MA: Artech House. 1991.
  10. Pat. USA № 5170140. Diode patch phase shifter insertable into a waveguide / Lowe K., Lynch D.D., Panaretos S., Seaton A. Date of publication: 08.12.1992.
  11. European pat. № 0357955B1. Diode patch phase shifter / Lowe K., Lynch D.D., Seaton A. Date of publication: 29.09.93.
  12. Volkov V.V., Ivanova V.P., Kuz’michev Yu.S., Solov’ev Yu.V. Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range // Techn. Phys. Lett. July 2005. V. 31. № 7. P. 611–612.
  13. Kim M., Yang J.G., Yang K. High-performance Q-band MMIC phase shifters using InGaAs pin diodes // Journal of Korean Ins. of El. Mag. Eng. and Science. Sep. 2009. V. 9. № 3. P. 159–163.
  14. Applications of pin diodes // Avago Technologies. AN 922. 5965-8666E. July 13, 2010.
  15. Kalantarov P.L., Cejjtlin L.A. Raschet induktivnostejj: Spravochnaja kniga. L.: EHnergoatomizdat. 1986.
  16. JUrov JU.JA. Tekhnicheskaja ehlektrodinamika (Konspekt lekcijj). CH. 2. L.: LEHTI. 1975.
  17. Gupta K., Gardzh R., CHadkha R. Mashinnoe proektirovanie SVCH-ustrojjstv / per. s angl. M.: Radioisvjaz. 1987.

 

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