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Contributions from heteroboundary to spin-orbit interaction parameters of electrons at the (001) GaAs/AlGaAs heteroboundary


Zh.A. Devizorova – Post-graduate Student, Moscow Institute of Physics and Technology E-mail: V.A. Volkov – Dr.Sc. (Phys.-Math.), Professor, Chief Researcher, Kotelnikov IRE RAS

Mechanisms of spin splitting of the energy spectrum of 2D electrons in asymmetric quantum well GaAs/AlGaAs have been studied. The interfacial spin splitting has been shown to compensate considerably the contribution of the bulk Dresselhaus mechanism and enhance the contribution of the Bychkov-Rashba mechanism. Analytical expressions for g-factor tensor components and its derivatives with respect to absolute value of quantizing component of magnetic field were found in oblique quantizing magnetic field. Results are in agreement with experimental data.


  1. Devizorova ZH.A., SHHepetilnikov A.V., Nefedov JU.A., Volkov V.A, Kukushkin I.V. Interfejjsnye vklady v parametry spin-orbitalnogo vzaimodejjstvija dlja ehlektronov na interfejjse (001) GaAs/AlGaAs // Pisma v ZHEHTF. 2014. T.100. Vyp.2. S.111‑117.
  2. Nefyodov Yu.A., Shchepetilnikov A.V., Kukushkin al. Electron g-factor anisotropy in GaAs/Al1−xGaxAs quantum wells of different symmetry // Phys. Rev. B. 2011. V. 84. P. 233302.


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