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Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

Keywords:

V.А. Burobin - Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru N.I. Kargin - Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru А.М. Konovalov - Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru А.А. Makarov - Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru А.А. Shchuka - Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru


A comparative analysis of substrate materials for heteroepitaxial growth of InAlN/GaN structures is made, processing issues of InAlN/GaN heteroepitaxial structures formation are presented, effects of processing technology parameters on composition and characteristics of epitaxially grown InxAl1-xN layers are modelled.
References:

 

  1. Burobin V.A. Novoe pokolenie ehlektronnojj tekhniki: Perspektivy razvitija priborov silovojj ehlektroniki na osnove nitrida gallija // Tekhnopolis XXI. 2012. Sentjabr. S. 18–19.
  2. Burobin V.A. Razrabotka konstrukcii i promyshlennojj tekhnologii izgotovlenija moshhnogo SVCH tranzistora na baze geteroehpitaksialnojj struktury AlGaN/GaN // Oboronnyjj kompleks – nauchno-tekhnicheskomu progressu Rossii. 2012. № 4. S. 66–71.
  3. Lobanova A.V. et al. AlInN MOVPE: growth chemistry and analysis of trends // Journal of Crystal Growth. 2012. T. 352. № 1. S. 199–202.
  4. Medjdoub F. et al. Status of the emerging InAlN/GaN power HEMT technology // Open Electrical & Electronic Engineering Journal. 2008. T. 2. S. 1–7.
  5. Lee D.S. et al. InAlN/GaN HEMTs with AlGaN back barriers // Electron Device Letters, IEEE. 2011. T. 32. № 5. S. 617‑619.

 

June 24, 2020
May 29, 2020

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