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Investigation of influence of particle rupture of low-dimensional nanowires on UI characteristics

Keywords:

S.V. Spiridonov – Post-graduate Student, Institute of Radio-Engineering and Telecommunications, Nanotechnologies in Electronics Department, Kazan National Research Technical University named after A.N. Tupolev. E-mail: com-m-a-i-l@yandex.ru
N.N. Rusyaev – Ph.D. (Eng.), Associate Professor, Institute of Radio-Engineering and Telecommunications, Nanotechnologies in Electronics Department, Kazan National Research Technical University named after A.N. Tupolev. E-mail: nnrusjaev@kai.ru
A.A. Trifonov – Assistant, Institute of Radio-Engineering and Telecommunications, Nanotechnologies in Electronics Department, Kazan National Research Technical University named after A.N. Tupolev. E-mail: blast_88@mail.ru
I.R. Safina – Student, Institute of Radio-Engineering and Telecommunications, Nanotechnologies in Electronics Department, Kazan National Research Technical University named after A.N. Tupolev. E-mail: vinchik1605@yandex.ru


This article provides an analysis of the influence of low-dimensional partial rupture of gold nanowires on its current-voltage characteristics. The investigated model was a gold wire with cross section 5×5 atoms and with a gap 15 angstroms. One dimensional gold chains of different lengths were placed between the borders of gap as conductive bridge contacts. The computer simulation tools were used to study the influence of length and the number of one-dimensional chains on the current-voltage characteristics of the structure. A comparison of the transport properties of defective wires with various types of conductive bridges was held. All calculations were made by extended Huckel method. According to obtained data are observed next dependences - the increasing the gap between the connecting chain and edge of conductor lead to decreasing the current until the interatomic distance equal to 5,5–6Å according to the following relationship: . Here «x» – it is the distance of the gap between the parts of the conductor, «i» – is the flowing current. Increasing the number of conductor bridges in the gap result to a proportional increasing the current. The study of several parallel chains has showed – a gap of two or more one-dimensional conductor bridges near the edge of the conductor leads to a significant asymmetry current curves relative sign of the voltage. In the area of positive values at a potential 1.5 V and 1.9 V presents significant current deviation more than 200 %. In the region of negative values with U > 1.4 B also are observed the current fluctuations, but the difference do not exceed 50 % of the mean value.
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