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Aspects of processing development for MOCVD growth of InAlN/GaN heterostructures for microwave transistors with high output power density

Keywords:

V.А. Burobin – Ph.D. (Eng.), General Director, JSC «GZ Pulsar». E-mail: burobin@gz-pulsar.ru
N.I. Kargin – Dr.Sc. (Eng.), Professor, Vice Rector, National Research Nuclear University (NRNU MEPHI). E-mail: krgn@ya.ru
А.М. Konovalov – Head SKB SSP, JSC «GZ Pulsar». E-mail: kb-it@mail.ru
А.А. Makarov – Leading Expert, JSC «GZ Pulsar». E-mail: a.makarov@gz-pulsar.ru
А.А. Shchuka – Dr.Sc. (Eng.), Professor, Moscow Institute of Physics and Technology. E-mail: shchuka@mail.mipt.ru


A comparative analysis of substrate materials for heteroepitaxial growth of InAlN/GaN structures is made, processing issues of InAlN/GaN heteroepitaxial structures formation are presented, effects of processing technology parameters on composition and characteristics of epitaxially grown InxAl1-xN layers are modelled.
References:

  1. Burobin V.A. Novoe pokolenie jelektronnoj tehniki: Perspektivy razvitija priborov silovoj jelektroniki na osnove nitrida gallija // Tehnopolis XXI. 2012. Sen-tjabr'. S. 18–19.
  2. Burobin V.A. Razrabotka konstrukcii i promyshlennoj tehnologii izgotovlenija moshhnogo SVCh tranzistora na baze geterojepitaksial'noj struktury AlGaN/GaN // Oboronnyj kompleks – nauchno-tehnicheskomu progressu Rossii. 2012. № 4. S. 66–71.
  3. Lobanova A.V. et al. AlInN MOVPE: growth chemistry and analysis of trends // Journal of Crystal Growth. 2012. T. 352. № 1. S. 199–202.
  4. Medjdoub F. et al. Status of the emerging InAlN/GaN power HEMT technology // Open Electrical & Electronic Engineering Journal. 2008. T. 2. S. 1–7.
  5. Lee D.S. et al. InAlN/GaN HEMTs with AlGaN back barriers // Electron Device Letters, IEEE. 2011. T. 32. № 5. S. 617–619.

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