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Resistive switching effect in thin films of hafnium oxide in TiN/Hf<sub>x</sub>Al<sub>1-x</sub>O<sub>y</sub>/HfO<sub>2</sub>/TiN nanostructures

Keywords:

S.A. Zaitsev – Ph.D. (Phys.-Math.), Research Scientist, Moscow Institute of Physics and Technology (State University)
O.M. Orlov – Ph.D. (Eng.), Associate Professor, Head of Laboratory, Molecular Electronics Research Center
Е.S. Gornev – Dr.Sc. (Phys.-Math.), Professor, Chief Research Scientist, Molecular Electronics Research Center
K.V. Egorov – Post-graduate Student, Moscow Institute of Physics and Technology (State University)
R.V. Kirtaev – Student, Moscow Institute of Physics and Technology (State University)
A.M. Markeev – Ph.D. (Phys.-Math.), Senior Research, Moscow Institute of Physics and Technology (State University)
A.V. Zablotskiy – Ph.D. (Phys.-Math.), Associate Professor, Moscow Institute of Physics and Technology (State University)


Metal-oxide-metal TiN/HfxAl1-xOy/HfO2/TiN nanostructure are made to study the effect of the resistive switching. Thin oxide film consists of two layers – a layer of stoichiometric hafnium oxide and layer of non-stoichiometric hafnium oxide doped with aluminum. Oxide layers deposited by atomic layer deposition. The concentration of aluminum atoms is linearly varied according to the depth of the layer. The resistive switching parameters of the nanostructures are obtained. MOM-strictures exhibit resistive switching effect to the low-resistance state at a voltage of 0.7...2 V , and to the high-resistance state at a voltage of 1...2 V. Retention time are estimated as at least 10 years that allow us to consider hafnium oxide thin films promising for the implementation of ReRAM cells.
References:

 

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