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Choice of circuitry, design-technology realizations by development of an invasive biosensor based on a transistor


V. N. Vyuginov – Ph.D. (Eng.), Director, CJSC «Svetlana-Semiconductors», St.-Peterburg. E-mail:
A. G. Gudkov – Dr.Sc. (Eng.), Professor, MSTU named after N. E. Bauman; General Director, «Hyperion» Ltd
A. A. Zybin – Head of Laboratory, CJSC «Svetlana-Electronpribor», St.-Peterburg
S. A. Meshkov – Ph.D. (Eng.), Senior Research Scientist, «Hyperion» Ltd
D. I. Tsyganov – Dr.Sc. (Eng.), Russian Medical Academy of Postgraduate Education Studies

The biosensor unites in itself a bio-element (a receptor providing recognition of specific analyte) and the converter transforming a biological event to a measured signal. The main demands to transistors, used for creation of invasive biosensors are defined: stability at physiological concentration of salts, biocompatibility, sensitivity. The classic heterostructure with one AlGaN/GaN heterojunction is perspective for an invasive biosensor. The heterostructure is grown up by a method of a gas-phase epitaxy using decomposition of organometallic compound with a low pressure on a sapphire substrate (the diameter is 50,8 mm, thickness – 450-500 micrometer). AlGaN/GaN HEMT without a gate is chosen as constructive realization of a biosensor. This design is technological. Since the precision operations connected with formation of barrier metallization are excluded from technological process of its production. Also the giving scheme of supply voltage on the transistor becomes simpler. Disadvantage of biosensors based on single GaN-transistors is sensitivity of their parameters to temperature change that can cause false detection. The comparison principle of information signal of the transistor with the biomolecules immobilized on its gate area with a basic signal of the same transistor (which gate area is isolated from analyte effect) is used for a problem decision.

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