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The temperature effect on resistivity of SiC wafers

Keywords:

V. V. Popov – Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg


In this article, the results of the temperature effects of the semi-insulating SiC wafer electrical resistivity are presented. The experiments were performed on 6H-SiC 3-inch SiC wafers. The wafers were annealed at the temperature of 1050oC within 2 min in Ar atmosphere at 760 torr pressure. The analysis of the wafers electrical resistivity before annealing, just after annealing, and in a week after annealing showed, that the annealing in inert-gas atmosphere improves the uniformity of the electrical resistivity of the wafers and reduces mechanical stresses. After the annealing this effect remains unchanged at normal conditions.
References:

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  2. Ambacher, O., Growth and applications of Group III-nitrides // J. Phys. D: Appl. Phys. 1998. № 31. P. 2653–2710.
  3. Popov V. V. Sposoby izmereniya udel'nogo soprotivleniya podlozhek poluizoliruyushchego karbida kremniya. 

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