Federal Target Program
gallium nitride (GaN)
silicon carbide (SiC)
V. V. Popov – Ph.D. (Eng.), General Director, JSC «Svetlana», St.-Peterburg
JSC «Svetlana» is one of the leaders in Russian Electronics in the field of microwave devices development and production. Research in this direction is concentrated at CJSC «Svetlana-Electronpribor» that is the leading subsidiary enterprise of JSC «Svetlana». Over the 20072013 period, JSC «Svetlana» has completed more then 50 development works on microwave electronics including 25 development works on Federal Target Programs. As a result of these development works, the series of solid state microwave devices was produced: phase-shifters, limiters, p-i-n diode switches, hybrid ICs and MMICs on GaAs, GaN, SiC, receiver-amplifier units, receiver-transmitter units, and protection devices.
The transmitter units for active phased arrays were developed on the base of power GaN transistors and hetero nanostructures of domestic manufacture (CJSC «Svetlana-Rost»).
For the first time in the branch, the technology of semi-insulating SiC monocrystals and high-quality SiC wafers with electrical resistivity more than 108 Ohmcm, was developed and put into production. The number of innovative research directions is successfully developed, including ultra wideband electronic components for radio electronic devices, using short pulse video signals, power radiation-resistant devices on the base of SiC, etc.
In JSC «Svetlana» the program of technological modification is developed and successfully realized to 2020. The realization of the program provides the increase of innovation device proportion and permanent business capacity extension of the new generation of microwave devices.