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Microwave power divider schematics for X-band power amplifiers

Keywords:

A. E. Obukhov – Engineer of Scientific Center of Special Radioelectronics and Management of Moscow Aviation Institute. E-mail: o6yxoff@gmail.com


In recent years, active development of microelectronics has led to further strengthening of its positions in all devices and systems of microwave band. Now there is the need for radio components that operate in 7…12 GHz frequency range. In this frequency range the systems of satellite communications, long-range and interplanetary satellite communications, radar, meteorology and navigation etc. operate. Microwave solid-state power amplifiers are highly needed in on the market. An overview of the newest X-band power amplifier units and MMICs is given in this paper. Both GaN- GaAs-based transistors are considered. The benefits of GaN technology are stressed.
References:

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