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Nanostructured TiV getter coatins


S.P. Timoshenkov – Dr. Sc. (Eng.), Professor, Head of Microelectronics Department, National Research University of Electronic Technology (MIET) (Moscow, Russia). E-mail:
D.S. Gaev – Ph.D. (Eng.), Associate Professor, Kabardino-Balkarian State University (KBSU) (Nalchik, Russia). E-mail:
A.N. Boyko – Ph.D. (Eng.), Associate Professor, Microelectronics Department, National Research University of Electronic Technology (MIET) (Moscow, Russia). E-mail:
R.R. Galiullin – Ph.D. (Eng.), Kabardino-Balkarian State University (KBSU) (Nalchik, Russia). E-mail:

The results of observation of structuring techniques of TiV getter layers made by magnetron sputtering are presented. Morphological properties of the layers have been explored using scanning electron and atomic-force microscopy, porosimetry, and fractal geometry. The value of effective surface area given by the fractal geometry tools was about of 155 m2/m3. For nanostructuring of metal layers and formation of structures are of high value of specific surface the use of porous silicon have been proposed. Copper was deposited electrochemically on the pore walls of micro and mesoporous silicon; as a result the composite structures with a specific surface area up to 167 m2/cm3 have been formed. The results can be used for creation of getters as well in other areas required materials are of developed surface.

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