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Stability margin increase of transistor oscillator steady-state regime method

Keywords:

A.V. Kononov


This paper focuses on the efficient transistor oscillator steady-state regime stability margin increase method proposed by author. This method is based on the use of correction in oscillator self-bias circuit. The oscillator CAD model is based on the system of Evtyanov’s symbolic shortened differential equations. Specific feature of this model is an accounting of intrinsic thermal feedback impact, which occurs owing to transistor electrophysical parameters temperature dependence. The oscillator steady-state regime stability analysis is based on the Routh-Hurwitz algebraic criterion. The suppression feature of oscillation self-modulation caused by excessive self-bias circuit inertance impact is experimentally proved by the proposed correction modification.
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