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The first domestic powerful semiconductor pulsed modulators

Keywords:

L.S. Odincov


Due to the increased power, reliability and the necessity to simplify exploitation of multi-radar RLS BMD with a phased antenna array (PAA), development powerful semiconductor pulsed modulator (PM) is crucial. Creation pulsed thyristor, capacitors, circuit design and new technologies. At our institution, since the late 50s (mail 1546), started a complex priority development of powerful thyristor pulsed modulators (TPM), with full discharge storage. By the mid-60s for individual power were microwave modules PAA based on new elements, schemes, designs and new technologies [2, 16, 20, 29, 31, 38, 40], were created TPM. Also for TPM were used the first domestic pulsed thyristor (ИТЛ-1 [32]) and metal-paper capacitors К42-15 [35, 36, 39]. Device setting dozens of times different from earlier know [1, 2]. In contrast to the U.S. TPM [3] and version of TPM RTI (Radio Technical Institute), in 1962 we experienced and offered more powerful, simple and perspective TPM with a single thyristor, used in the stands (Fig.4. report for 1965, themes: «Вентиль», «Импульс»), as well as regular individual modular radar station TPM. Already under construction and serial production successfully completed test in over 1000 hours as TPM and tens of thousands development incoming new devices, at current up to 50 A eff. and ap to 1 kA imp. with voltage of 1 kV at a speed of current rise up to 300 A/ms.
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