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Diagnostics of nanosized ferroelectric films on semiconductor and dielectric substrates using RBS-spectroscopy method


M.S. Afanas’ev, V.K. Egorov, G.V. Chucheva, P.A. Lychnikov, A.V. Byrov

Peculiarities of Rutherford backscattering (RBS) are presented. It is shown that RBS-spectroscopy is most effective for the analysis of BSTO films on magnesium oxide substrates. Ba1-xSrxTiO3 films on various substrates are analyzed by RBS method. Using ion-beam diagnostics comparative studies are conducted of Ba1-xSrxTiO3 (BSTO) films 20-140 nm thick on single-crystal substrates Si (100), MgO (100) and NdGaO3 (100). Profiles of distribution of structure-forming concentration elements according to film thickness are obtained. Model distributions of elements in films in the form of sandwich sequence are analyzed which correspond to theoretical RBS spectrum. The thickness of nanosized ferroelectric films on the substrates is defined, the level of their element heterogeneity depending on film thickness is determined, and also the extend of their diffusive impurity caused by substrate atoms is established. It is found that then perovskite films are deposited on silicon and magnesium oxide substrates, active diffusion penetration of substrate atoms into a film surface is observed. In the process of deposition, a buffer oxide layer has appeared on the surface Si substrate which allowed the subsequent deposition of Ba1-xSrxTiO3 film. It is shown that the RBS-spectroscopy is most effective for the analysis of BSTO films on a magnesium oxide substrate, and the reliability of results of studies by this method essentially depends on the relation between structure-forming element numbers in films and substrates
May 29, 2020

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